Highly heterogeneous epitaxy of flexoelectric
WebJul 20, 2024 · The direct measurement of flexoelectric coefficients in epitaxial thin films is an unresolved problem, due to the clamping effect of substrates which induces a net strain (and hence parasitic piezoelectricity) in addition to strain gradients and flexoelectricity. WebThe tensor of flexoelectric coefficients governing the flexoelectric response can be defined as where Pi, , and are the polarization vector, elastic strain tensor, and the strain gradient; the derivative is taken at vanishing electric field E.
Highly heterogeneous epitaxy of flexoelectric
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WebApr 3, 2024 · The heterogeneous integration of ferroelectric and ferromagnetic materials is a fruitful way to design multiferroic oxides. The realization of freestanding heterogeneous membranes of multiferroic oxides is highly desirable. In this study, epitaxial BaTiO 3 /La 0.7 Sr 0.3 MnO 3 freestanding bilayer membranes are fabricated using pulsed laser ... WebJun 14, 2024 · In this study, we develop a mixed finite element method (FEM) for the study of problems with both strain gradient elasticity (SGE) and flexoelectricity being taken into account. To use C 0 continuous elements in mixed FEM, the kinematic relationship between displacement field and its gradient is enforced by Lagrangian multipliers. Besides, four ...
WebFrom an epitaxy point of view, Ge serves as a good substrate for the growth of high-quality BTO because of the quasi-lattice- match characteristic (with a lattice mismatch of only … WebMay 3, 2024 · Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge. 30 May 2024. Liyan Dai, Jinyan Zhao, … Gang Niu. Download PDF. Article; Open Access; Published: 03 May 2024;
WebMay 1, 2024 · The study found that the flexoelectric response in reasonable approximations is the sum of two terms. The first term appears due to the inhomogeneous strain of the … WebMay 30, 2024 · Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge. 1 Europe PMCrequires Javascript to function effectively. Either your …
WebThe integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of …
Flexoelectric effect is an effect widely existing in solid materials, including dielectric, semiconductor, conductor and two-dimensional materials, especially for ultra-thin materials (which can produce greater deflection). Considering that functional oxide thin films are of great potential for many applications like flexible … See more BTO films were grown on single-layer graphene-covered Ge substrates with surface orientations of (001) and (011). The graphene monolayers were directly … See more In order to further investigate the surface passivation role of graphene monolayer, the 90 nm-thick BTO films directly grown on Ge (011) substrates using exactly the … See more From the heteroepitaxy point of view, it is of great interest to understand the growth mode and the strain relaxation of remote epitaxial BTO3-δ films on Ge (011). … See more Considering that the van der Waals force existing at the interface of BTO3-δ/graphene/Ge is rather weak, the potential of the exfoliation of remote epitaxial BTO3-δ … See more numbering of fingers anatomyWebMay 30, 2024 · The transferred BTO 3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding … numbering of the digits of the handWebDec 12, 2012 · Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale … numbering of hand digitsWebMay 30, 2024 · Highly heterogeneous epitaxy of flexoelectric BaTiO membrane on Ge By Liyan Dai Nature.com 8 hours ago The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. numbering of ten commandmentsWebMar 19, 2024 · Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si … numbering of teeth in mouthWebHighly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge Article Full-text available May 2024 Liyan Dai Jinyan Zhao Jingrui Li [...] Gang Niu The integration of … nintendo switch games home designWebThe transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but … nintendo switch game show